III-nitride blue and ultraviolet photonic crystal light emitting diodes
Identifieur interne : 00A849 ( Main/Repository ); précédent : 00A848; suivant : 00A850III-nitride blue and ultraviolet photonic crystal light emitting diodes
Auteurs : RBID : Pascal:04-0055877Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes (LEDs) using photonic crystals (PCs) under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power at 20 mA of 300×300 μm2 unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs, respectively, as a result of the PC formation. Possible ways for further improving enhancement of light extraction using PCs are discussed. © 2004 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00C073
Links to Exploration step
Pascal:04-0055877Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">III-nitride blue and ultraviolet photonic crystal light emitting diodes</title>
<author><name sortKey="Oder, T N" uniqKey="Oder T">T. N. Oder</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Kansas</region>
</placeName>
<wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Kim, K H" uniqKey="Kim K">K. H. Kim</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Kansas</region>
</placeName>
<wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Kansas</region>
</placeName>
<wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Kansas</region>
</placeName>
<wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0055877</idno>
<date when="2004-01-26">2004-01-26</date>
<idno type="stanalyst">PASCAL 04-0055877 AIP</idno>
<idno type="RBID">Pascal:04-0055877</idno>
<idno type="wicri:Area/Main/Corpus">00C073</idno>
<idno type="wicri:Area/Main/Repository">00A849</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Electron beam lithography</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>Indium compounds</term>
<term>Light emitting diodes</term>
<term>Nitrogen compounds</term>
<term>photonic crystals</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8560J</term>
<term>4270Q</term>
<term>Etude expérimentale</term>
<term>Diode électroluminescente</term>
<term>Gallium composé</term>
<term>Indium composé</term>
<term>Aluminium composé</term>
<term>Azote composé</term>
<term>Lithographie faisceau électron</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes (LEDs) using photonic crystals (PCs) under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power at 20 mA of 300×300 μm<sup>2</sup>
unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs, respectively, as a result of the PC formation. Possible ways for further improving enhancement of light extraction using PCs are discussed. © 2004 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>84</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>III-nitride blue and ultraviolet photonic crystal light emitting diodes</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ODER (T. N.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KIM (K. H.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>466-468</s1>
</fA20>
<fA21><s1>2004-01-26</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2004 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>04-0055877</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We present results on enhancement of 460 nm blue and 340 nm UV optical power output in III-nitride light emitting diodes (LEDs) using photonic crystals (PCs) under current injection. Triangular arrays of the PCs with diameter/periodicity of 300/700 nm were patterned using electron-beam lithography and inductively coupled plasma dry etching. The total power at 20 mA of 300×300 μm<sup>2</sup>
unpackaged LED chips revealed an increase by 63% and 95% for the blue and UV LEDs, respectively, as a result of the PC formation. Possible ways for further improving enhancement of light extraction using PCs are discussed. © 2004 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B70Q</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>4270Q</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Diode électroluminescente</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Light emitting diodes</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>photonic crystals</s0>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Azote composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nitrogen compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Lithographie faisceau électron</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Electron beam lithography</s0>
</fC03>
<fN21><s1>033</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0404M000077</s0>
</fN47>
</pA>
</standard>
</inist>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00A849 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00A849 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= *** parameter Area/wikiCode missing *** |area= IndiumV3 |flux= Main |étape= Repository |type= RBID |clé= Pascal:04-0055877 |texte= III-nitride blue and ultraviolet photonic crystal light emitting diodes }}
This area was generated with Dilib version V0.5.77. |